IPD068P03L3G awọn ohun elo Itanna atilẹba atilẹba IC chip MCU BOM iṣẹ ni iṣura IPD068P03L3G
Ọja eroja
| ORISI | Apejuwe |
| Ẹka | Oye Semikondokito Products |
| Mfr | Awọn imọ-ẹrọ Infineon |
| jara | OptiMOS™ |
| Package | Teepu & Reel (TR) Teepu Ge (CT) Digi-Reel® |
| Ipo ọja | Ti nṣiṣe lọwọ |
| FET Iru | P-ikanni |
| Imọ ọna ẹrọ | MOSFET (Okisi Metal) |
| Sisan lọ si Foliteji Orisun (Vdss) | 30 V |
| Lọwọlọwọ – Imugbẹ Tesiwaju (Id) @ 25°C | 70A (Tc) |
| Foliteji Wakọ (Max Rds Tan, Min Rds Tan) | 4.5V, 10V |
| Rds Lori (Max) @ ID, Vgs | 6.8mOhm @ 70A, 10V |
| Vgs(th) (Max) @ ID | 2V @ 150µA |
| Ẹnubodè idiyele (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Vgs (Max) | ± 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7720 pF @ 15 V |
| Ẹya FET | - |
| Pipada Agbara (Max) | 100W (Tc) |
| Awọn iwọn otutu ti nṣiṣẹ | -55°C ~ 175°C (TJ) |
| Iṣagbesori Iru | Oke Oke |
| Package Device Olupese | PG-TO252-3 |
| Package / Ọran | TO-252-3, DPak (2 asiwaju + Tab), SC-63 |
| Nọmba Ọja mimọ | IPD068 |
Awọn iwe aṣẹ & Media
| ORIṢẸRẸ | ỌNA ASOPỌ |
| Awọn iwe data | IPD068P03L3 G |
| Miiran Jẹmọ Awọn iwe aṣẹ | Apá Number Itọsọna |
| Ifihan Ọja | Data Processing Systems |
| HTML Datasheet | IPD068P03L3 G |
| Awọn awoṣe EDA | IPD068P03L3GATMA1 nipasẹ Ultra Librarian |
Ayika & okeere Classifications
| IFA | Apejuwe |
| Ipo RoHS | ROHS3 ni ibamu |
| Ipele Ifamọ Ọrinrin (MSL) | 1 (Kolopin) |
| Ipò REACH | REACH Ko ni ipa |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Afikun Resources
| IFA | Apejuwe |
| Awọn orukọ miiran | IPD068P03L3GATMA1DKR IPD068P03L3GATMA1-ND SP001127838 IPD068P03L3GATMA1CT IPD068P03L3GATMA1TR |
| Standard Package | 2.500 |
Transistor
Transistor jẹ asemikondokito ẹrọlo latipọ sitabiyipadaitanna awọn ifihan agbara atiagbara.Transistor jẹ ọkan ninu awọn bulọọki ipilẹ ti igbalodeitanna.[1]O ti wa ni kq tisemikondokito ohun elo, nigbagbogbo pẹlu o kere ju mẹtaebute okofun asopọ si ẹya ẹrọ itanna Circuit.Afolitejitabilọwọlọwọti a lo si bata kan ti awọn ebute transistor n ṣakoso lọwọlọwọ nipasẹ bata meji ti awọn ebute.Nitoripe agbara iṣakoso (jade) le ga ju agbara iṣakoso (input), transistor le mu ifihan agbara pọ si.Diẹ ninu awọn transistors ti wa ni akopọ ni ọkọọkan, ṣugbọn ọpọlọpọ diẹ sii ni a rii ni ifibọ sinuese iyika.
Austro-Hungarian physicist Julius Edgar Lilienfelddabaa awọn Erongba ti atransistor ipa aayeni 1926, sugbon o je ko ṣee ṣe lati kosi kan ṣiṣẹ ẹrọ ni ti akoko.[2]Ni igba akọkọ ti ṣiṣẹ ẹrọ lati wa ni itumọ ti je kantransistor ojuami-olubasọrọti a se ni 1947 nipasẹ American physicistsJohn BardeenatiWalter Brattainnigba ti ṣiṣẹ labẹWilliam ShockleyniBell Labs.Awọn mẹta pin 1956Ebun Nobel ninu Fisiksifun aseyori won.[3]Awọn julọ o gbajumo ni lilo iru ti transistor ni awọnirin –oxide – semikondokito aaye-ipa transistor(MOSFET), eyi ti a se nipaMohamed AtallaatiDawon Kahngni Bell Labs ni ọdun 1959.[4][5][6]Awọn transistors ṣe iyipada aaye ti ẹrọ itanna, o si pa ọna fun kere ati din owoawọn redio,awọn iṣiro, atiawọn kọmputa, lara awon nkan miran.
Pupọ julọ awọn transistors ni a ṣe lati mimọ pupọohun alumọni, ati diẹ ninu awọn latigermanium, ṣugbọn awọn ohun elo semikondokito miiran ni a lo nigba miiran.Transistor le ni iru awọn ti ngbe idiyele nikan, ni transistor ti o ni ipa aaye, tabi o le ni iru awọn gbigbe idiyele meji nitransistor junction bipolarawọn ẹrọ.Akawe pẹlu awọnigbale tube, transistors ni gbogbogbo kere ati nilo agbara diẹ lati ṣiṣẹ.Awọn tubes igbale kan ni awọn anfani lori awọn transistors ni awọn igbohunsafẹfẹ iṣẹ giga pupọ tabi awọn foliteji iṣẹ ṣiṣe giga.Ọpọlọpọ awọn oriṣi ti transistors ni a ṣe si awọn pato iwọntunwọnsi nipasẹ awọn aṣelọpọ lọpọlọpọ.
